vs-25tts...spbf series www.vishay.com vishay semiconductors revision: 05-jul-13 1 document number: 94383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor, surface mount, phase control scr, 16 a features ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? designed and qualified according jedec-jesd47 ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? input rectification (soft start) ? vishay input diodes, switches and output rectifiers which are available in identical package outlines description the vs-25tts...spbf high voltage series of silicon controlled rectifiers are specif ically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. ? note ?t a = 55 c, t j = 125 c, footprint 300 mm 2 product summary package to-263ab (d 2 pak) diode variation single scr i t(av) 16 a v drm /v rrm 800 v, 1200 v v tm 1.25 v i gt 45 ma t j - 40 to 125 c gate 2 anode cathode 1 3 d 2 pa k output current in typical applications applications single-phase bridge three-phase bridge units nema fr-4 or g10 glass fabric-based epoxy ? with 4 oz. (140 m) copper 3.5 5.5 a aluminum ims, r thca = 15 c/w 8.5 13.5 aluminum ims with heatsink, r thca = 5 c/w 16.5 25.0 major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 16 a i rms 25 v rrm /v drm 800 to 1200 v i tsm 350 a v t 16 a, t j = 25 c 1.25 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm , at 125 c ma vs-25tts08spbf 800 800 10 vs-25tts12spbf 1200 1200
vs-25tts...spbf series www.vishay.com vishay semiconductors revision: 05-jul-13 2 document number: 94383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 93 c, 180 conduction half sine wave 16 a maximum rms on-state current i rms 25 maximum peak, one-cycle, ? non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 630 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 6300 a 2 ? s maximum on-state voltage drop v tm 16 a, t j = 25 c 1.25 v on-state slope resistance r t t j = 125 c 12.0 m ? threshold voltage v t(to) 1.0 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h vs-25tts08, vs-25tts12 anode supply = 6 v, ? resistive load, initial i t = 1 a, t j = 25 c - 150 maximum latching current i l anode supply = 6 v, resistive load, t j = 25 c 200 maximum rate of rise of off-state voltage dv/dt t j = t j max., linear to 80 %, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc ga te current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc ga te voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate volt age not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate curr ent not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-25tts...spbf series www.vishay.com vishay semiconductors revision: 05-jul-13 3 document number: 94383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m] copper 40 c/w ? for recommended footprint and soldering tech niques refer to appl ication note #an-994 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 125 c soldering temperature t s for 10 s (1.6 mm from case) 260 maximum thermal resistance, ? junction to case r thjc dc operation 1.1 c/w typical thermal resistance, ? junction to ambient (pcb mount) r thja (1) 40 approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 25tts08s 25tts12s 90 100 110 120 130 0 5 10 15 20 30 60 90 120 180 maximum allowable case temperature (c) conduc tion angle average on-state current (a) r (dc) = 1.1 c/ w thjc 80 90 100 110 120 130 0 5 10 15 20 25 30 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period r (dc) = 1.1 c/ w thjc 0 5 10 15 20 25 048121620 rm s li m i t conduction angle maximum average on-state power loss (w) avera ge on-state current (a) 180 120 90 60 30 t = 125c j 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) t = 125c j
vs-25tts...spbf series www.vishay.com vishay semiconductors revision: 05-jul-13 4 document number: 94383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - gate characteristics 150 200 250 300 350 110100 number of equal amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-sta te current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 100 150 200 250 300 350 400 0.01 0.1 1 pe a k ha lf s ine wave on-state current (a) pu lse tra in d u ra t io n ( s) maximum non repetitive surge current versus pulse train duration. control of cond uc tion ma y not be ma inta ined. initia l t = 125c no volta g e rea p p lie d ra te d v rea p p lied rrm j 1 10 100 1000 012345 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 square wave pulse duration (s) steady state value (dc opera tion) si n g l e pu l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 thjc tra nsient thermal imp ed anc e z (c/w)
vs-25tts...spbf series www.vishay.com vishay semiconductors revision: 05-jul-13 5 document number: 94383 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - thermal impedance z thjc characteristics ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-25tts08spbf 50 1000 anti static plastic tubes vs-25tts08strrpbf 800 800 13" diameter reel vs-25tts08strlpbf 800 800 13" diameter reel vs-25tts12spbf 50 1000 anti static plastic tubes vs-25tts12strrpbf 800 800 13" diameter reel vs-25tts12strlpbf 800 800 13" diameter reel links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a ) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) insta nta neo us g a te volta g e (v) tj = 2 5 c t j = 125 c b)recommended load line for frequency limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s tj = - 1 0 c ig d vg d <= 30% rated d i/ dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 w, t p = 1 ms (2) pgm = 20 w, t p = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms 08 = 800 v 12 = 1200 v - 1 - vishay semiconductors product 2 - current rating (25 = 25 a) 3 - circuit configuration: 4 - package: - pbf = lead (pb)-free 5 6 - voltage rating: voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ac s = standard recovery rectifier 9 7 - s = to-220 d 2 pak (smd-220) version 8 none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 2 4 6 7 8 9 vs- 25 t t s 12 s trl pbf
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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